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MOSFETs - Page 221

18400 MOSFETs from 61 manufacturers meet your specification.
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PFC Device - PRM011N10D

MOSFET from PFC Device
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Description:100 V, 42 to 66 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 to 66 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
9.3 to 15.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QM3004D

MOSFET from uPI Semiconductor
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Description:30 V, 11.4 to 55 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.4 to 55 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
7.5 to 14 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
41 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO252
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
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Isahaya Electronics - INK0001BU1

MOSFET from Isahaya Electronics
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Description:50 V, 100 mA, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 mA
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
4.0 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-75A
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
TPCP8107 Image
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Toshiba - TPCP8107

MOSFET from Toshiba
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Description:-40 V, 44.6 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-8 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
13.9 to 26.8 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
2.01 W
Package:
PS-8
Applications:
Motor Drivers, Mobile Equipment
more info
BSC076N04ND Image
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Infineon Technologies - BSC076N04ND

MOSFET from Infineon Technologies
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Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
7 to 7.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8
Industry:
Industrial, Commercial
Applications:
SMPS, Inductive wireless charging, Load switches, ...
more info
SiR836DP-T1-GE3 Image
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Vishay - SiR836DP-T1-GE3

MOSFET from Vishay
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Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
15 to 22.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
POL, Synchronous rectification
more info
STP80N240K6 Image
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STMicroelectronics - STP80N240K6

MOSFET from STMicroelectronics
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Description:-30 to 30 V, 25.9 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
197 to 220 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
140 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Flyback converter, Adapters for tablets, notebook ...
more info
IXTA120P065T Image
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Littelfuse - IXTA120P065T

MOSFET from Littelfuse
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Description:-65 V, 185 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-120 A
Drain Source Breakdown Voltage:
-65 V
Drain Source Resistance:
10 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
298 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263 AA
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
PSMN1R5-25MLH Image
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Nexperia - PSMN1R5-25MLH

MOSFET from Nexperia
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Description:25 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
121 to 150 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
1.46 to 4.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
106 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK33
Applications:
Synchronous rectification, DC-to-DC converters, Hi...
more info
RQK0201QGDQA Image
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Renesas - RQK0201QGDQA

MOSFET from Renesas
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Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
30 to 53 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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