MOSFETs - Page 261

18401 MOSFETs from 61 manufacturers meet your specification.
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
14.2 to 22.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
24 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Primary side switch, Synchronous rectification, DC...
more info
Description:-30 to 30 V, 12.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
2000 to 2500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
IPAK
Applications:
Switching applications
more info
Description:-500 V, 205 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 A
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
230 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-264
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:40 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
198 to 280 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.93 to 2.45 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
198 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK56E
Applications:
Synchronous rectification, DC-to-DC converters, Hi...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8.8 to 11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FPA
Industry:
Commercial, Industrial
more info
Description:40 V, -135 to 135 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-135 to 135 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.1 to 4.7 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.4 to 93 W
Temperature operating range:
-55 to 175 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
Description:-20 to 20 V, 9 to 23 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
61 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
6.4 to 12.6 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN-8
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
Description:-8 to 8 V, 0.9 to 1.5 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.67 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
1000 to 2000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.71 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Applications:
Load Switch in Portable Electronics
more info
Description:-8 to 19 V, 63 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 to 49 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
45 to 61 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
176 W
Temperature operating range:
-40 to 175 Degree C
Package:
TO-247-4
Applications:
EV charging, Server power supplies, Solar PV inver...
more info
Description:-40 V, P-Channel Depletion Mode MOSFET
Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.3 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
25 to 70 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
1.79 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive
Applications:
Automotive Switching Circuit
more info

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