MOSFETs - Page 268

18401 MOSFETs from 61 manufacturers meet your specification.
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
109 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.2 to 3.6 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
56.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, High power density DC/D...
more info
Description:-20 to 20 V, 33 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-12.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
10 to 17 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Switching applications
more info
Description:-100 V, 140 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-50 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
55 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-268
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:25 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
1.05 to 2.75 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
179 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK56
Applications:
DC-to-DC converters, Lithium-ion battery protectio...
more info
Description:80 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
9 to 14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Switching Mode Power Supply
more info
Description:-40 V, -40 to 40 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
18.1 to 31.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
53 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
more info
Description:-20 to 20 V, 10.9 to 23.1 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4 to 7.6 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK8
Industry:
Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
Description:-20 to 20 V, 4 to 7.8 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
56 to 120 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.08 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Applications:
Power management functions, Analog Switch, Load Sw...
more info
Description:-8 to 19 V, 101 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 66 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 68 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
326 W
Temperature operating range:
-40 to 175 Degree C
Package:
TO 247-3
Applications:
Solar inverters, EV motor drive, High voltage DC/D...
more info
Description:30 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.1 to 9.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
19 W
Temperature operating range:
150 Degree C
Package:
HSO8-F4-B
Industry:
Industrial, Commercial
more info

Filters

Industry

Manufacturers

More

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.