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MOSFETs - Page 332

18461 MOSFETs from 62 manufacturers meet your specification.
SSM6N68NU Image
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Toshiba - SSM6N68NU

MOSFET from Toshiba
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Description:30 V, 1.8 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
67 to 180 Milliohm
Gate Source Voltage:
-8 to 12 V
Power Dissipation:
2 W
Package:
UDFN6
Applications:
Power Management Switches, DC-DC Converters
more info
RJK0454DPB Image
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Renesas - RJK0454DPB

MOSFET from Renesas
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Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.9 to 4.9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
R6020PNJFRA Image
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ROHM Semiconductor - R6020PNJFRA

MOSFET from ROHM Semiconductor
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Description:600 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
190 to 370 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
304 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching Power Supply
more info
BSL316C H6327 Image
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Infineon Technologies - BSL316C H6327

MOSFET from Infineon Technologies
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Description:-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.5 to 1.4 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
113 to 280 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TSOP6-6
Industry:
Automotive
Applications:
Automotive, DC-DC, Motor control, Onboard charger
more info
SiR882BDP-T1-RE3 Image
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Vishay - SiR882BDP-T1-RE3

MOSFET from Vishay
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Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
67.5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
6.9 to 9.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
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onsemi - NVTFS6H888NTAG

MOSFET from onsemi
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Description:-20 to 20 V, 4.7 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
45.7 to 55 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
18 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN-8
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
STU6N90K5 Image
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STMicroelectronics - STU6N90K5

MOSFET from STMicroelectronics
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Description:-30 to 30 V, 11 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
910 to 1100 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
IPAK
Applications:
Switching applications
more info
MMIX1T600N04T2 Image
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Littelfuse - MMIX1T600N04T2

MOSFET from Littelfuse
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Description:40 V, 590 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
600 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
830 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMPD
Industry:
Commercial, Industrial
Applications:
DC-DC Converters and Off-Line UPS, Primary-Side Sw...
more info
DMP3011SFVW Image
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Diodes Incorporated - DMP3011SFVW

MOSFET from Diodes Incorporated
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Description:-25 to 25 V, 25 to 46 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-19.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8000 to 18000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI3333-8 (SWP)
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
C2M1000170D Image
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Wolfspeed - C2M1000170D

MOSFET from Wolfspeed
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Description:-10 to 25 V, 22 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.5 to 5 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
800 to 1400 Milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
69 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO 247-3
Applications:
Auxiliary power supplies, Switch Mode Power Suppli...
more info
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