MOSFETs - Page 382

18462 MOSFETs from 62 manufacturers meet your specification.
Description:100 V, 6.7 to 10.7 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.7 to 10.7 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
12 to 15 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
Description:40 V, 55 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.95 to 1.96 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
132 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8.8 to 11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220ABA
Industry:
Commercial, Industrial
more info
Description:100 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
120 to 190 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching, Motor Drive
more info
Description:150 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
8.7 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
80 to 95 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
18 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220
Industry:
Industrial, Commercial
Applications:
Class D Audio
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
8.8 to 14.5 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
3.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Adaptor switch, Load switch
more info
Description:-20 to 20 V, 4 to 9 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
24 to 38 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
33 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFNW8
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
Description:-20 to 20 V, 22 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
15.5 to 26 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
DC to 175 Degree C
Package:
PowerFLAT 5x6
Applications:
Switching applications
more info
Description:-200 V, 380 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-68 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
55 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
568 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-268
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:-20 to 20 V, 59.2 to 126.2 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-14.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
5700 to 10000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
58.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI5060-8
Applications:
Notebook Battery Power Management, DC-DC Converter...
more info

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