This whitepaper explores the advantages of Schottky diodes, which exhibit minimal voltage drop during forward conduction and negligible leakage current when reverse biased. Unlike traditional silicon diodes, Schottky diodes offer reduced voltage drop and decreased reverse bias recovery current. The discussion focuses on Schottky diodes made with a silicon carbide (SiC) n-epitaxial semiconductor material, highlighting their superior performance compared to conventional silicon-based diodes.