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GaN Power Commercialization with Highest QualityHighest Reliability 650V HEMTs- Requirements, Successes and Challenges

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  • Author: P. Parikha, Y. Wua, L. Shena, R. Barra, S. Chowdhurya, J. Grittersa, S. Yea a, P. Smitha, L. McCarthya, R. Birkhahna, M. Moorea, J. McKaya, H. Clementa, U. Mishraa, R. Lala, P. Zuka, T. Hosodab, K. Shonob, K. Imanishib, Y. Asaib
Abstract—Gallium Nitride (GaN) is now a popular choice for power conversion. High voltage (HV) GaN HEMTs (GaN FETs) in the range of 650-900 volts are emerging as the next standard for power conversion. This paper highlights key successes in efficient and compact converters/inverters ranging from high performance gaming/crypto-mining power supplies, titanium class server power, servo drives, PV inverters, and automotive OBCs, dc-dc converters, pole charges. The reasons for market success including unmatched quality & reliability, high volume GaN on Si manufacturing, robust performance in applications as well as challenges to achieve the full potential of GaN FETs are presented
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