EPC Space introduces the new FBS-GAM02-P-R50 Radiation-Hardened Multifunction Power Module. It incorporates eGaN switching power HEMTs with intended end-use design within commercial satellite space environments. 

These modules include two output power switches, two high-speed gate drive circuits (consisting entirely of eGaN switching elements), two power Schottky diode clamp elements with shoot-through prevention logic (for the Half-Bridge connection) and a +5 V_DC gate drive bias “power good” monitoring circuitry in an innovative, space-efficient, 18 pin SMT molded epoxy package.

Key features of the FBS-GAM02-P-R50 Power Module

• 50 V_DC/10 A Fully De-Rated Device
• Integrated FDA10N30 eGaN Output Power HEMTs
• Four Possible Configurations: Single Low-Side Gate Driver, Single High-Side Gate Driver, Independent Low- and High-Side Drivers and Half-Bridge Gate Drivers with Input Shoot-through Protection
• Internal Shoot-Through Protection
• Internal Power Good Circuitry
• High-Speed Switching Capability: 1.0+ MHz
• Rugged Compact Molded SMT Package
• “Pillar” I/O Pads
• eGaN HEMT Driver Switching Elements
• Rad-Hard/Commercially Screened
• Guaranteed Total Ionizing Dose: Rated to 100 kRad
• Single Event: SEE immunity for LET of ~83.7 MeV/mg/cm² with V_DS up to 100% of rated Breakdown
• Neutron Fluence: Maintains specification up to 1 x 10¹³ N/cm²

Key applications of the FBS-GAM02-P-R50 Power Module

• Power Switches/Actuators
• Single and Multi-Phase Motor Phase Drivers
• Point-Of-Load Building Block
• High-Speed DC-DC Conversion

Click here to learn more about the GaN hub of everything PE.