
New Yorker Electronics has announced the availability of its new Good-Ark Semiconductor SSF2418E 6A/20V Dual N-Channel MOSFET with ESD protection in the SOT-23-6L package. The SSF2418E utilizes the latest trench technologies and advanced process techniques to achieve excellent RDS(ON), low gate charge and a high repetitive avalanche rating.
Equipped with ESD protection up to 2KV, this Halogen-free device is suitable for use as a unidirectional or bidirectional load switch, facilitated by its common drain configuration. Used in DC-DC conversion, load switching and battery protection, additional benefits include its high energy efficiency, fast switch speed and low input and output leakage. It is also available in the TSSOP-8 package.
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Key features & benefits:
- Advanced trench MOSFET process technology
- Ultra-low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150°C operating temperature
- Lead free product
Key applications:
- PWM
- Load Switching
- General Purpose
Click here to learn more about the SSF2418E from New Yorker Electronics.