Richardson Electronics, Ltd. has announced the availability of SemiQ’s 2nd generation silicon carbide power switches, 1200 V 80mΩ SiC MOSFETs. These MOSFETs complement SemiQ’s existing SiC rectifiers at 650 V, 1200 V, and 1700 V.

SemiQ has engineered two new MOSFETs, GP2T080A120U (TO-247-3L) and GP2T080A120H (TO-247-4L), to provide the best trade-off of conduction and switching losses. These new products give designers more flexibility over a broader range of applications in comparison to other devices on the market. Samples are available upon request.

SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles, power supplies and data centers and are specifically designed and tested to operate reliably in extreme environments. Compared to legacy silicon IGBTs, SemiQ’s MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight, and cooling requirements.

“SemiQ has gone above and beyond in their continued investment in this wide-bandgap technology,” stated Richardson’s Greg Peloquin, Executive Vice-President, Power and Microwave Technologies Group. “The addition of their Silicon Carbide MOSFET technology allows for the expansion of demand creation capabilities in a number of applications.”

Richardson Electronics provides solutions and adds value through design-in support, systems integration, prototype design, manufacturing, testing, logistics, and aftermarket technical service and repair on a global basis.

“As our SiC MOSFET portfolio continues to grow, we appreciate the support of Richardson Electronics’ team.  They know the customers, the applications, and our SiC Devices,“ stated Michael T. Robinson, President & General Manager of SemiQ Inc.

Click here to learn more about the GP2T080A120U SiC MOSFET.

Click here to learn more about the GP2T080A120H SiC MOSFET.