1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Cambridge GaN Devices
  6. CGD65A130SH2

CGD65A130SH2

GaN Power Transistor by Cambridge GaN Devices (8 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Cambridge GaN Devices.

The CGD65A130SH2 from Cambridge GaN Devices is a GaN Power Transistor with Gate Threshold Voltage 2.2 to 4.2 V, Drain Source Voltage 650 V, Drain Source Resistance 130 to 350 milli-ohm, Continous Drain Current 12 A, Total Charge 1.9 nC. Tags: Surface Mount. More details for CGD65A130SH2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    CGD65A130SH2
  • Manufacturer
    Cambridge GaN Devices
  • Description
    650 V, 130 to 350 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    2.2 to 4.2 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    130 to 350 milli-ohm
  • Continous Drain Current
    12 A
  • Total Charge
    1.9 nC
  • Output Capacitance
    24 pF
  • Turn-on Delay Time
    6 ns
  • Turn-off Delay Time
    8 ns
  • Rise Time
    6 ns
  • Fall Time
    6 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    PSUs, Industrial SMPS and inverters, Mobile chargers, fast-chargers, AC adapters, Notebook adapters, PC power, Gaming PSUs, LED lighting, Class-D Audio, TV and wireless power, PV micro-inverters, SMPS and converters in single-switch and halfbridge topolog
  • Dimensions
    8 x 8 mm

Technical Documents
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products