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CGD65B200S2

GaN Power Transistor by Cambridge GaN Devices (8 more products)
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The CGD65B200S2 from Cambridge GaN Devices is a GaN Power Transistor with Gate Threshold Voltage 2.2 to 4.2 V, Drain Source Voltage 650 V, Drain Source Resistance 200 to 530 milli-ohm, Continous Drain Current 8.5 A, Total Charge 1.4 nC. Tags: Surface Mount. More details for CGD65B200S2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    CGD65B200S2
  • Manufacturer
    Cambridge GaN Devices
  • Description
    650 V, 200 to 530 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    2.2 to 4.2 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    200 to 530 milli-ohm
  • Continous Drain Current
    8.5 A
  • Total Charge
    1.4 nC
  • Output Capacitance
    14 pF
  • Turn-on Delay Time
    5 ns
  • Turn-off Delay Time
    13 ns
  • Rise Time
    4 ns
  • Fall Time
    4 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    PSUs, Industrial SMPS and inverters, Mobile chargers, fast-chargers, AC adapters, Notebook adapters, PC power, Gaming PSUs, LED lighting, Class-D Audio, TV and wireless power, PV micro-inverters, SMPS and converters in single-switch and halfbridge topolog
  • Dimensions
    5 x 6 mm

Technical Documents
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