The CGD65C025SP2 from Cambridge GaN Devices is an Enhancement Mode GaN Power Transistor that is ideal for industrial, datacentre and telecom SMPS, industrial motor drives, PV inverters, uninterruptible power supplies, and energy storage systems applications. This transistor has a drain-source voltage of up to 650 V, a gate-source voltage from -1 V to +20 V, and a drain-source on-resistance of 25 milli-ohms. It has a continuous drain current of up to 60 A. This transistor is designed with an integrated Miller clamp, enabling high immunity against dV/dt-induced shoot-through effect. It supports true 0 V turn-off to simplify gate drive design and maximizing efficiency, while its fast turn-on time enables high-frequency operation and easy paralleling.
This power transistor is compatible with Si MOSFET, SiC, and IGBT gate drivers, making it highly versatile. It has a thermally enhanced, bottom-side cooled packaging that improves heat dissipation, and wettable flanks that allow for automated optical inspection. It also offers electrostatic discharge (ESD) protection of over 2 kV for robust handling and reliability. This normally off-power GaN power transistor is available in a surface-mount package that measures 10 x 10 mm.