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EPC2001C

GaN Power Transistor by Efficient Power Conversion (95 more products)
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The EPC2001C from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 5.6 to 7 milli-ohm, Continous Drain Current 36 A, Pulsed Drain Current 150 A. Tags: Die. More details for EPC2001C can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2001C
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    5.6 to 7 milli-ohm
  • Continous Drain Current
    36 A
  • Pulsed Drain Current
    150 A
  • Total Charge
    7.5 to 9 nC
  • Input Capacitance
    770 to 900 pF
  • Output Capacitance
    430 to 650 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    High-Frequency DC-DC Conversion, Industrial Automation, Synchronous Rectification, Class-D Audio, Low Inductance Motor Drives
  • Dimensions
    4.1 x 1.6 mm

Technical Documents
View details on the manufacturer's website
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