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EPC2012C

GaN Power Transistor by Efficient Power Conversion (95 more products)
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The EPC2012C from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 200 V, Drain Source Resistance 70 to 100 milli-ohm, Continous Drain Current 5 A, Pulsed Drain Current 22 A. Tags: Die. More details for EPC2012C can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2012C
  • Manufacturer
    Efficient Power Conversion
  • Description
    200 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    70 to 100 milli-ohm
  • Continous Drain Current
    5 A
  • Pulsed Drain Current
    22 A
  • Total Charge
    1 to 1.3 nC
  • Input Capacitance
    100 to 140 pF
  • Output Capacitance
    64 to 85 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    High Frequency DC-DC conversion, Class-D Audio, Wireless power Transfer
  • Dimensions
    1.7 x 0.9 mm

Technical Documents
View details on the manufacturer's website
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