The INN650DA140A from Innoscience is a GaN Enhancement-Mode Power Transistor. The transistor has a drain-source breakdown voltage of 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of 106 milli-ohms. It has a continuous drain current of up to 17 A and a pulsed drain current of less than 32 A. This transistor is manufactured using Innoscience's GaN-on-Silicon technology. It provides zero reverse recovery charge while requiring a very low gate charge of 3.5 nC, making it suitable for fast switching and low power loss applications. This transistor is available in a surface-mount package that measures 5 x 6 x 0.9 mm and is ideal for AC-DC converters, DC-DC converters, totem pole PFC, fast battery charging, high-density power conversion and high-efficiency power conversion applications.