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EPC2016C

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2016C Image

The EPC2016C from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 12 to 16 milli-ohm, Continous Drain Current 18 A, Pulsed Drain Current 75 A. Tags: Die. More details for EPC2016C can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2016C
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    12 to 16 milli-ohm
  • Continous Drain Current
    18 A
  • Pulsed Drain Current
    75 A
  • Total Charge
    3.4 to 4.5 nC
  • Input Capacitance
    360 to 420 pF
  • Output Capacitance
    210 to 310 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    High Speed DC-DC Conversion, Class-D Audio, High Frequency Hard-Switching and Soft-Switching Circuits
  • Dimensions
    2.1 x 1.6 mm

Technical Documents
View details on the manufacturer's website
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