The EPC2016C from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 12 to 16 milli-ohm, Continous Drain Current 18 A, Pulsed Drain Current 75 A. Tags: Die. More details for EPC2016C can be seen below.