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EPC2034C

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2034C Image

The EPC2034C from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 200 V, Drain Source Resistance 6 to 8 milli-ohm, Continous Drain Current 48 A, Pulsed Drain Current 213 A. Tags: Die. More details for EPC2034C can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2034C
  • Manufacturer
    Efficient Power Conversion
  • Description
    200 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    6 to 8 milli-ohm
  • Continous Drain Current
    48 A
  • Pulsed Drain Current
    213 A
  • Total Charge
    11.1 to 13.8 nC
  • Input Capacitance
    1155 to 1386 pF
  • Output Capacitance
    641 to 962 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    High Frequency DC/DC Conversion, Multi-level AC/DC Power Supplies, Wireless Power, Solar Micro Inverters, Robotics, Class-D Audio, Low Inductance Motor Drives
  • Dimensions
    4.6 x 2.6 mm

Technical Documents
View details on the manufacturer's website
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