EPC2045

GaN Power Transistor by Efficient Power Conversion (95 more products)

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EPC2045 Image

The EPC2045 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 5.6 to 7 milli-ohm, Continous Drain Current 16 A, Pulsed Drain Current 130 A. Tags: Die. More details for EPC2045 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2045
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    5.6 to 7 milli-ohm
  • Continous Drain Current
    16 A
  • Pulsed Drain Current
    130 A
  • Total Charge
    6 to 7.8 nC
  • Input Capacitance
    767 to 1016 pF
  • Output Capacitance
    295 to 443 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    Open Rack Server Architectures, Lidar/Pulsed Power Applications, Power supplies, Class D audio, LED Lighting, Low Inductance Motor Drive, ToF module using Vcsel laser for camera modules, laptops and smart phones
  • Dimensions
    2.5 x 1.5 mm

Technical Documents

Latest GaN Transistors

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