EPC2052

GaN Power Transistor by Efficient Power Conversion (95 more products)

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EPC2052 Image

The EPC2052 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor that is ideal for 48 V servers, lidar/pulsed power, isolated power supplies, point of load converters, class D audio, LED lighting, and low inductance motor drives applications. This transistor has a drain-source voltage of over 100 V, a gate threshold voltage of 1.4 V, and a drain-source on-resistance of less than 10 milli-ohms. It has a continuous drain current of up to 8.2 A and a pulsed drain current of less than 74 A. This power transistor offers extremely high electron mobility and a low-temperature coefficient, resulting in very low drain-source on-resistance values. It consists of a lateral structure that provides low gate charge and integrates a majority charge carrier diode that offers zero reverse recovery charge. This RoHS compliant power transistor is available as a passivated die that measures 1.5 x 1.5 mm.

Product Specifications

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Product Details

  • Part Number
    EPC2052
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Enhancement Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    1.4 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    10 milli-ohm
  • Continous Drain Current
    8.2 A
  • Pulsed Drain Current
    74 A
  • Total Charge
    3.5 to 4.5 nC
  • Input Capacitance
    441 to 584 pF
  • Output Capacitance
    195 to 293 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    48 V Servers, Lidar/Pulsed Power, Isolated Power Supplies, Point of Load Converters, Class D Audio, LED Lighting, Low Inductance Motor Drive
  • Dimensions
    1.5 x 1.5 mm

Technical Documents

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