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EPC2103

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2103 Image

The EPC2103 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 80 V, Drain Source Resistance 4 to 5.5 milli-ohm, Continous Drain Current 30 A, Pulsed Drain Current 195 A. Tags: Die. More details for EPC2103 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2103
  • Manufacturer
    Efficient Power Conversion
  • Description
    80 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Half Bridge
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    80 V
  • Drain Source Resistance
    4 to 5.5 milli-ohm
  • Continous Drain Current
    30 A
  • Pulsed Drain Current
    195 A
  • Total Charge
    6.5 to 8 nC
  • Input Capacitance
    730 to 880 pF
  • Output Capacitance
    445 to 790 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    High Frequency DC-DC, Motor Drive
  • Dimensions
    6.05 x 2.3 mm

Technical Documents
View details on the manufacturer's website
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