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EPC2212

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2212 Image

The EPC2212 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 10 to 13.5 milli-ohm, Continous Drain Current 18 A, Pulsed Drain Current 75 A. Tags: Die. More details for EPC2212 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2212
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.7 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    10 to 13.5 milli-ohm
  • Continous Drain Current
    18 A
  • Pulsed Drain Current
    75 A
  • Total Charge
    3.2 to 4 nC
  • Input Capacitance
    339 to 407 pF
  • Output Capacitance
    238 to 357 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    Lidar/Pulsed Power Applications, High Power Density DC-DC Converters, Class-D Audio, High Intensity Headlamps
  • Dimensions
    2.1 x 1.6 mm

Technical Documents
View details on the manufacturer's website
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