The EPC2304 from Efficient Power Conversion is an N-Channel Enhancement Mode GaN Power Transistor that has been designed to exhibit very high switching frequency, high efficiency, and low on-time characteristics in a very small footprint. It has a drain-source voltage of over 200 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of 3.1 milli-ohms. This transistor has a continuous drain current of up to 102 A and a pulsed drain current of less than 260 A. It is based on GaN semiconductor technology that offers exceptionally high electron mobility and a low-temperature coefficient, thereby resulting in a very low drain-source on-resistance.

This RoHS-compliant power transistor has a lateral structure that provides low gate charge and integrates a majority charge carrier diode that ensures zero reverse recovery charge. It is available in a thermally enhanced surface-mount package that measures 3 x 5 mm and is ideal for synchronous rectification, AC/DC chargers, SMPS, adaptors, high-frequency DC-DC conversion, class D audio, high-power lidar and dToF, wireless power applications.