The EPC2305 from Efficient Power Conversion is an N-Channel Enhancement Mode GaN Power Transistor that has been designed to provide very high switching frequency, high efficiency, and low on-time characteristics in an ultra-small footprint. It has a drain-source voltage of over 150 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of less than 2.2 milli-ohms. This transistor has a continuous drain current of up to 80 A and a pulsed drain current of less than 329 A. It uses an enhanced Thermal Max package with an exposed top that enhances top-side thermal management and side-wettable flanks that allow for an easy optical inspection. This power transistor is comparatively less than half the size of the best-in-class Si MOSFET with reduced gate and gate-drain charge resulting in lower switching and gate driver losses.

The EPC2305 offers the highest power density owing to its enhanced efficiency, smaller size, and higher switching frequency while integrating smaller inductors and a fewer number of capacitors. This RoHS-compliant enables designers to save space and features ultra-low capacitance and zero reverse recovery that enable an efficient operation in many topologies. It is available in a surface-mount package that measures 3 x 5 mm and is ideal for high-frequency DC/DC, AC/DC chargers and adaptors, BLDC motor drives, e-mobility motor drives, solar optimizer and MPPT, synchronous rectification for chargers, adaptors, and power supplies, class D audio, fast charging for phones and notebooks, gaming PCs, DC/DC and chargers for e-mobility, power tools, and vacuum cleaner applications.