The EPC2307 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor that is ideal for synchronous rectification, AC/DC chargers, SMPS, adaptors, high-frequency DC-DC conversion, class-D audio, wireless power, and high power LiDAR and dToF applications. It has a drain-to-source voltage of over 200 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of less than 10 milli-ohms. The GaN transistor has a continuous drain current of up to 48 A and a pulsed drain current of less than 130 A. It offers extremely high electron mobility and a low-temperature coefficient, resulting in very low drain-source on-resistance values.  This GaN power transistor consists of a lateral structure that provides low gate charge and integrates a majority charge carrier diode that offers zero reverse recovery charge.

This RoHS-compliant GaN power transistor has an ultra-small footprint and offers a high power density, low conduction losses, and lower switching losses, which results in a higher efficiency. It is available in a surface mount package that measures 3 x 5 mm.