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GPI90010DF88

GaN Power Transistor by GaNPower International (30 more products)
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The GPI90010DF88 from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 2.5 V, Drain Source Voltage 900 V, Drain Source Resistance 120 to 300 milli-ohm, Continous Drain Current 10 A, Pulsed Drain Current 22 A. Tags: Surface Mount. More details for GPI90010DF88 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPI90010DF88
  • Manufacturer
    GaNPower International
  • Description
    900 V, 120 to 300 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 2.5 V
  • Drain Source Voltage
    900 V
  • Drain Source Resistance
    120 to 300 milli-ohm
  • Continous Drain Current
    10 A
  • Pulsed Drain Current
    22 A
  • Total Charge
    2.6 nC
  • Input Capacitance
    78 pF
  • Output Capacitance
    21 pF
  • Turn-on Delay Time
    5 ns
  • Turn-off Delay Time
    16 ns
  • Rise Time
    10 ns
  • Fall Time
    11 ns
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    Switching Power Applications, Server and Telecom Power Application, EV OBC and DC-DC Converters, UPS, Inverters, PV
  • Dimensions
    8 x 8 mm

Technical Documents
View details on the manufacturer's website
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