The IGT65R035D2 from Infineon Technologies is an Enhancement Mode GaN Transistor that is ideal for telecom, datacenter SMPS-based on half-bridge hard and soft switching topologies such as totem pole PFC and high-frequency LLC, chargers, adapters, and industrial applications. It has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of 35 milli-ohms. This GaN transistor has a continuous drain current of up to 49 A and a pulsed drain current of less than 97 A. It is manufactured using 200 mm wafer technology on fully automated production lines, resulting in narrow production tolerances and the highest production quality. 

This GaN transistor utilizes normally OFF transistor technology that ensures safe operation while offering rapid and precise power delivery control. It improves system efficiency and reliability and also delivers robust performance under challenging conditions. This transistor achieves high power density and enables very fast switching with no reverse recovery charge. It provides excellent commutation ruggedness and complies with the 2 kV electrostatic discharge (HBM) standard. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 9.7 x 11.475 mm.