The EPC2619 from Efficient Power Conversion is an N-Channel Enhancement Mode GaN Power Transistor that is ideal for Class-D audio, isolated DC-DC converters, DC-DC converters, solar optimizers, battery chargers, storage, stabilizers, eBikes, eScooters, DC Servo USB PD 3.1 chargers, point-of-load converters, and medical robotics applications. It has a drain-source voltage of over 80 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of 3.3 milli-ohms. This transistor has a continuous drain current of up to 29 A and a pulsed drain current of less than 164 A. It offers high electron mobility and a low-temperature coefficient that results in a very low drain-source on-resistance value.

This RoHS-compliant transistor has a lateral structure that provides an exceptionally low gate charge and integrates a majority carrier diode that ensures zero reverse recovery charge. It is available as a die that measures 2.5 x 1.5 mm.