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EPC2901C_55

GaN Power Transistor by Efficient Power Conversion (95 more products)
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The EPC2901C_55 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.7 V, Drain Source Voltage 100 V, Drain Source Resistance 3.1 to 7 milli-ohm, Continous Drain Current 36 A, Pulsed Drain Current 150 A. Tags: Die. More details for EPC2901C_55 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2901C_55
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V, 36 A, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 2.7 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    3.1 to 7 milli-ohm
  • Continous Drain Current
    36 A
  • Pulsed Drain Current
    150 A
  • Total Charge
    10 nC
  • Input Capacitance
    1020 pF
  • Output Capacitance
    650 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Applications
    High-Frequency DC-DC Conversion, Industrial Automation, Synchronous Rectification, Low Inductance Motor Drives
  • Dimensions
    4.1 x 1.6 mm

Technical Documents
View details on the manufacturer's website
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