The EPC7004 from Efficient Power Conversion is a Radiation Hard eGaN Power Transistor. It has a drain-to-source voltage of over 100 V, a gate-to-source voltage of up to 6 V, and a drain-source on-resistance of 5 mΩ. This GaN power transistor has a continuous drain current of up to 60 A and a pulsed drain current of less than 160 A. It has exceptionally high electron mobility and low-temperature coefficient that results in a very low drain-source on-resistance. This EPC7004 consists of a lateral structure that provides a very low gate charge and offers an extremely fast switching time. It is available as a passivated die that measures 4.1 x 1.6 mm and is ideal for commercial satellite EPS, ion thrusters, high-frequency radiation-hard DC-DC converters, deep space probes, radiation hard motor drives, space applications: DC-DC power, motor drives, lidar, and avionics applications.