The EPC7014 from Efficient Power Conversion is a Radiation-Hard GaN Power Transistor that has been specifically designed for critical applications in high-reliability or commercial satellite space environments. It has a drain-source breakdown voltage of over 60 V, a gate threshold voltage of 1.6 V, and a drain-source on-resistance of 240 milli-ohms. This transistor has a continuous drain current of up to 2.4 A and a pulsed drain current of less than 4 A. It offers superior reliability in a space environment as there are no minority carriers for a single event and less displacement for protons and neutrons as it incorporates a wideband semiconductor. This GaN transistor provides exceptionally high electron mobility and low-temperature coefficient, resulting in very low drain-source on-resistance values. It is available in a passivated die that measures 0.9 x 0.9 mm and is ideal for rad-hard motor drives, high-frequency rad-hard DC-DC conversions, commercial satellite EPS, avionics, and deep space probe applications.