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EPC8009

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC8009 Image

The EPC8009 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 65 V, Drain Source Resistance 90 to 130 milli-ohm, Continous Drain Current 4 A, Pulsed Drain Current 7.5 A. Tags: Die. More details for EPC8009 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC8009
  • Manufacturer
    Efficient Power Conversion
  • Description
    65 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    65 V
  • Drain Source Resistance
    90 to 130 milli-ohm
  • Continous Drain Current
    4 A
  • Pulsed Drain Current
    7.5 A
  • Total Charge
    370 to 450 nC
  • Input Capacitance
    45 to 52 pF
  • Output Capacitance
    19 to 28 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    Ultra High Speed DC-DC Conversion, RF Envelope Tracking, Wireless Power Transfer, Game Console and Industrial Movement Sensing (Lidar)
  • Dimensions
    2.1 x 0.85 mm

Technical Documents
View details on the manufacturer's website
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