The FBG04N30B from EPC Space is a Radiation Hard eGaN Power Switching HEMT that is ideal for satellite and avionics, deep space probes, high-speed radiation-hard DC-DC conversion, and radiation-hard motor controller applications. This GaN HEMT has a drain-source breakdown voltage of up to 40 V, a gate threshold voltage of 1 V, and a drain-source on-resistance of less than 10 milli-ohms. It has a continuous drain current of up to 30 A and a pulsed drain current of less than 120 A. This GaN transistor has been specifically designed for critical applications in high-reliability or commercial satellite space environments. It offers exceptionally high electron mobility and a low-temperature coefficient, resulting in very low drain-source on-resistance values.

This RoHS-compliant transistor has a lateral die structure that provides a very low gate charge and very fast switching times. It has a faster power supply switching frequency that results in high power density, higher efficiency, and more compact packaging. The RoHS-compliant eGaN HEMT is available as a die that measures 5.7 x 3.9 mm.