The FBG10N30B from EPC Space is a Radiation-Hard Enhancement Mode GaN Transistor that has been designed in a lightweight, compact hermetic package to meet the critical demands in high reliability or commercial satellite space environments. The transistor has a drain-source breakdown voltage of 100 V and a gate threshold voltage of 1.2 V. It has a continuous drain current of 30 A and drain-source resistance of 12 milli-ohms. This transistor has exceptionally high electron mobility and a low-temperature coefficient resulting in a very low drain-source on-resistance value. It has a lateral die structure that offers very low gate charge and extremely fast switching times, thereby enabling faster power supply switching frequencies. It is provided with a dedicated source sense pin for enhanced performance by eliminating the common source inductance.
The FBG10N30B is available in a surface-mount package that measures 5.4 x 3.6 x 1.9 mm and is ideal for satellite and avionics, deep space probes, high-speed rad hard DC-DC conversion, and rad-hard motor controller applications.