The FBG30N04CSH from EPC Space is a Radiation Hard eGaN Power Switching HEMT that is ideal for commercial satellite EPS & avionics, deep space probes, high-speed radiation hard DC-DC conversion and radiation hard motor controller applications. This GaN HEMT has a drain-source voltage of up to 300 V, a gate threshold voltage of up to 2.8 V, and a drain-source on-resistance of less than 210 milli-ohms. It has a continuous drain current of up to 4 A and a pulsed drain current of less than 12 A. This GaN transistor has been specifically designed for critical applications in high-reliability or commercial satellite space environments. It offers exceptionally high electron mobility and a low-temperature coefficient, resulting in very low drain-source on-resistance values.

This RoHS-compliant transistor has a lateral die structure that provides a very low gate charge and very fast switching times. It has a faster power supply switching frequency that results in high power density, higher efficiency, and more compact packaging. This RoHS-compliant eGaN HEMT is available as a die that measures 4.445 x 4.445 x 2.286 mm.