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FBS-GAM02-P-R50

GaN Power Transistor by EPC Space (46 more products)
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FBS-GAM02-P-R50 Image

The FBS-GAM02-P-R50 from EPC Space is a GaN Power Transistor with Drain Source Voltage 0.83 to 1.15 V, Drain Source Resistance 9 to 28 milli-ohm, Continous Drain Current 10 A, Pulsed Drain Current 15 A, Output Capacitance 500 to 1150 pF. Tags: Surface Mount. More details for FBS-GAM02-P-R50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FBS-GAM02-P-R50
  • Manufacturer
    EPC Space
  • Description
    0.83 to 1.15 V, 10 A, GaN Power Transistor

General

  • Configuration
    Single
  • Industry
    Space, Industrial, Commercial
  • Drain Source Voltage
    0.83 to 1.15 V
  • Drain Source Resistance
    9 to 28 milli-ohm
  • Continous Drain Current
    10 A
  • Pulsed Drain Current
    15 A
  • Output Capacitance
    500 to 1150 pF
  • Turn-on Delay Time
    45 to 150 ns
  • Turn-off Delay Time
    45 to 190 ns
  • Rise Time
    6.5 to 28 ns
  • Fall Time
    5 to 25 ns
  • Temperature operating range
    -40 to 130 Degree C
  • Package Type
    Surface Mount
  • Package
    SMT
  • Applications
    Power Switches/Actuators, Single and Multi-Phase Motor Phase Drivers, Point-Of-Load Building Block, High Speed DC-DC Conversion

Technical Documents
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