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JANSH2N7681UFGC

GaN Power Transistor by EPC Space (46 more products)
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The JANSH2N7681UFGC from EPC Space is a GaN Power Transistor with Drain Source Voltage 200 V, Drain Source Resistance 14 milli-ohm, Continous Drain Current 34 to 55 A, Total Charge 14 C. Tags: Surface Mount. More details for JANSH2N7681UFGC can be seen below.

Product Specifications

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Product Details

  • Part Number
    JANSH2N7681UFGC
  • Manufacturer
    EPC Space
  • Description
    200 V, 34 to 55 A, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    14 milli-ohm
  • Continous Drain Current
    34 to 55 A
  • Total Charge
    14 C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    FSMD-G
View details on the manufacturer's website
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