The GS-065-060-3-B from GaN Systems is an Enhancement Mode GaN-on-Silicon Power Transistor. It has a gate threshold voltage of 1.7 V, drain-to-source voltage of over 650 V, and a drain-to-source on-resistance of 65 mΩ. This power transistor has a continuous drain current of up to 60 A and a pulsed drain current of less than 120 A. It is manufactured based on the GaN system’s patented Island and GaNPx packaging technologies. The GaNPx packaging technology offers low inductance and low thermal resistance. This bottom-side cooled transistor offers low junction-to-case thermal resistance for demanding high-power applications.

This RoHS 3 (6+4) compliant transistor is available as a die that measures 11 x 9 mm and is ideal for AC-DC converters, DC-DC converters, solar inverters, energy storage systems, on-board chargers, industrial motor drives, laser drivers, traction drives, uninterruptable power supplies, and wireless power transfer applications.