The GS-065-060-3-T from GaN Systems is an Enhancement Mode GaN-on-Silicon Power Transistor. It has a gate-to-source voltage of up to 7 V and a gate threshold voltage of 1.7 V. This power transistor has a drain-to-source breakdown voltage of over 650 V and a drain-source on-resistance of 65 mΩ. It has a continuous drain current of up to 60 A and a pulsed drain current of less than 120 A. This transistor uses patented Island Technology that results in a high current die and high yield. It utilizes GaNPx packaging that enables low inductance and low thermal resistance. This device is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high-power applications. This RoHS 3(6+4) compliant transistor is available as a die that measures 9.2 x 7.8 mm and is ideal for AC-DC converters, DC-DC converters, inverters, energy storage systems, solar energy, laser drivers, traction drive, on-board battery chargers, wireless power transfer, bridgeless totem-pole PFC and UPS applications.