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GS-065-080-1-D

GaN Power Transistor by GaN Systems (25 more products)
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GS-065-080-1-D Image

The GS-065-080-1-D from GaN Systems is a GaN Power Transistor with Drain Source Voltage 650 V, Drain Source Resistance 18 milli-ohm, Continous Drain Current 80 A, Total Charge 16 nC. Tags: Die. More details for GS-065-080-1-D can be seen below.

Product Specifications

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Product Details

  • Part Number
    GS-065-080-1-D
  • Manufacturer
    GaN Systems
  • Description
    650 V Enhancement Mode GaN Transistor

General

  • Configuration
    Single
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    18 milli-ohm
  • Continous Drain Current
    80 A
  • Total Charge
    16 nC
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    GaNPX
  • Applications
    High efficiency power conversion, High density power conversion, AC-DC Converters, Bridgeless Totem Pole PFC, ZVS Phase Shifted Full Bridge, Half Bridge topologies, Synchronous Buck or Boost, Uninterruptable Power Supplies, Industrial Motor Drives, Single
  • Dimensions
    6.6 x 5.6 mm
View details on the manufacturer's website
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