The GS61008T from GaN Systems is an Enhancement Mode GaN-on-Si Power Transistor that is ideal for energy storage systems, AC-DC converters, UPS, industrial motor drives, fast battery charging, Class D audio amplifiers, traction drive, wireless power transfer, and robotics applications. It has a drain-to-source breakdown voltage of over 100 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of less than 9.5 mΩ. This transistor has a continuous drain current of up to 90 A and a pulsed drain current of less than 140 A. It is based on a patented Island technology cell layout that offers high current die and high yield and utilizes the industry’s GaNPx packaging method that results in low inductance and thermal resistance. This RoHS 3 (6+4)-compliant GaN-on-Si transistor provides cooling at the top side, thereby offering very low junction-to-case thermal resistance for demanding high-power applications. It is available as a die that measures 7 x 4 mm.