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GS66502B

GaN Power Transistor by GaN Systems (25 more products)
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The GS66502B from GaN Systems is a GaN Power Transistor with Gate Threshold Voltage 1.1 to 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 200 to 516 milli-ohm, Continous Drain Current 6.3 to 7.5 A, Pulsed Drain Current 15 A. Tags: Die. More details for GS66502B can be seen below.

Product Specifications

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Product Details

  • Part Number
    GS66502B
  • Manufacturer
    GaN Systems
  • Description
    650 V Enhancement Mode GaN Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    1.1 to 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    200 to 516 milli-ohm
  • Continous Drain Current
    6.3 to 7.5 A
  • Pulsed Drain Current
    15 A
  • Total Charge
    1.6 nC
  • Input Capacitance
    60 pF
  • Output Capacitance
    17 pF
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    GaNPX
  • Applications
    AC-DC Converters, DC-DC Converters, Uninterruptible Power Supplies, Industrial Motor Drives, Appliance Motor Drives, Fast Battery Charging, Class D Audio amplifiers, Power Adapters, Wireless Power Transfer
  • Dimensions
    5.0 x 6.6 x 0.51 mm

Technical Documents
View details on the manufacturer's website
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