1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. GaN Systems
  6. GS66506T

GS66506T

GaN Power Transistor by GaN Systems (25 more products)
Download Datasheet Request Quote

Note : Your request will be directed to GaN Systems.

GS66506T Image

The GS66506T from GaN Systems is a GaN Power Transistor with Gate Threshold Voltage 1.1 to 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 67 to 175 milli-ohm, Continous Drain Current 18 to 22.5 A, Pulsed Drain Current 48 A. Tags: Die. More details for GS66506T can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GS66506T
  • Manufacturer
    GaN Systems
  • Description
    650 V Enhancement Mode GaN Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    1.1 to 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    67 to 175 milli-ohm
  • Continous Drain Current
    18 to 22.5 A
  • Pulsed Drain Current
    48 A
  • Total Charge
    4.5 nC
  • Input Capacitance
    185 pF
  • Output Capacitance
    49 pF
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    GaNPX
  • Applications
    AC-DC Converters, DC-DC Converters, Uninterruptible Power Supplies, Industrial Motor Drives, Appliance Motor Drives, Fast Battery Charging, Class D Audio amplifiers, Power Adapters, Wireless Power Transfer
  • Dimensions
    5.6 x 4.5 x 0.54 mm

Technical Documents
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products