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GP120R60T4

GaN Power Transistor by GaNPower International (30 more products)
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The GP120R60T4 from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 1.5 to 4 V, Drain Source Voltage 1100 V, Drain Source Resistance 42 to 60 milli-ohm, Continous Drain Current 30 A, Total Charge 8.25 nC. Tags: Through Hole. More details for GP120R60T4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GP120R60T4
  • Manufacturer
    GaNPower International
  • Description
    1100 V, 42 to 60 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.5 to 4 V
  • Drain Source Voltage
    1100 V
  • Drain Source Resistance
    42 to 60 milli-ohm
  • Continous Drain Current
    30 A
  • Total Charge
    8.25 nC
  • Input Capacitance
    236 pF
  • Output Capacitance
    72 pF
  • Turn-on Delay Time
    34 ns
  • Turn-off Delay Time
    33 ns
  • Rise Time
    26 ns
  • Fall Time
    20 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO247-4
  • Applications
    Switching Power Applications, Server and Telecom Power, EV OBC and DC-DC Converters UPS, Inverters, PV

Technical Documents
View details on the manufacturer's website
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