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GPI4TIC8DFV

GaN Power Transistor by GaNPower International (30 more products)
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The GPI4TIC8DFV from GaNPower International is a GaN Power Transistor with Drain Source Voltage 900 V, Drain Source Resistance 170 to 190 milli-ohm, Continous Drain Current 8 A, Turn-on Delay Time 11 ns, Turn-off Delay Time 16 ns. Tags: Surface Mount. More details for GPI4TIC8DFV can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPI4TIC8DFV
  • Manufacturer
    GaNPower International
  • Description
    900 V, 170 to 190 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Drain Source Voltage
    900 V
  • Drain Source Resistance
    170 to 190 milli-ohm
  • Continous Drain Current
    8 A
  • Turn-on Delay Time
    11 ns
  • Turn-off Delay Time
    16 ns
  • Rise Time
    8 ns
  • Fall Time
    15 ns
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN6x8
  • Applications
    Switching Power, Power adapters, Power Delivery Chargers

Technical Documents
View details on the manufacturer's website
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