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GPI65007DF56

GaN Power Transistor by GaNPower International (30 more products)
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The GPI65007DF56 from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 2.9 V, Drain Source Voltage 650 V, Drain Source Resistance 170 to 360 milli-ohm, Continous Drain Current 7 A, Pulsed Drain Current 16 A. Tags: Surface Mount. More details for GPI65007DF56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPI65007DF56
  • Manufacturer
    GaNPower International
  • Description
    650 V, 170 to 360 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 2.9 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    170 to 360 milli-ohm
  • Continous Drain Current
    7 A
  • Pulsed Drain Current
    16 A
  • Total Charge
    2.1 nC
  • Input Capacitance
    76.1 pF
  • Output Capacitance
    20.9 pF
  • Turn-on Delay Time
    4 ns
  • Turn-off Delay Time
    14 ns
  • Rise Time
    8 ns
  • Fall Time
    8 ns
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    Switching Power Applications, Adapters, Quick Chargers
  • Dimensions
    5 x 6 mm

Technical Documents
View details on the manufacturer's website
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