1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. GaNPower International
  6. GPI65060DFC

GPI65060DFC

GaN Power Transistor by GaNPower International (30 more products)
Download Datasheet Request Quote

Note : Your request will be directed to GaNPower International.

The GPI65060DFC from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 2.9 V, Drain Source Voltage 650 V, Drain Source Resistance 25 to 30 milli-ohm, Continous Drain Current 60 A, Total Charge 16.1 nC. Tags: Surface Mount. More details for GPI65060DFC can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GPI65060DFC
  • Manufacturer
    GaNPower International
  • Description
    650 V, 25 to 30 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 2.9 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    25 to 30 milli-ohm
  • Continous Drain Current
    60 A
  • Total Charge
    16.1 nC
  • Input Capacitance
    420 pF
  • Output Capacitance
    143 pF
  • Turn-on Delay Time
    9 ns
  • Turn-off Delay Time
    26 ns
  • Rise Time
    17 ns
  • Fall Time
    17 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN8x8
  • Applications
    Switching Power, Server and Telecom Power, EV OBC and DC-DC converters

Technical Documents
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products