GPIHI8ICDF68

GaN Power Transistor by GaNPower International (30 more products)

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The GPIHI8ICDF68 from GaNPower International is a GaN Power Transistor with Drain Source Voltage 900 V, Drain Source Resistance 170 to 180 milli-ohm, Continous Drain Current 8 A, Turn-on Delay Time 11 ns, Turn-off Delay Time 8 ns. Tags: Surface Mount. More details for GPIHI8ICDF68 can be seen below.

Product Specifications

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Product Details

Part Number
GPIHI8ICDF68
Manufacturer
GaNPower International
Description
900 V, 170 to 180 milli-ohm GaN Transistor

General

Configuration

Single
Industry

Commercial, Industrial
Drain Source Voltage

900 V
Drain Source Resistance

170 to 180 milli-ohm
Continous Drain Current

8 A
Turn-on Delay Time

11 ns
Turn-off Delay Time

8 ns
Rise Time

29 ns
Fall Time

34 ns
RoHS Compliant

Yes
Package Type

Surface Mount
Package

DFN6x8
Applications

High-side switch in switching power, Power adapters and power delivery chargers