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GPIXU30SB5L

GaN Power Transistor by GaNPower International (30 more products)
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The GPIXU30SB5L from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 2.5 V, Drain Source Voltage 1200 V, Drain Source Resistance 52 to 76 milli-ohm, Continous Drain Current 30 A, Total Charge 8.25 nC. Tags: Surface Mount. More details for GPIXU30SB5L can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPIXU30SB5L
  • Manufacturer
    GaNPower International
  • Description
    1200 V, 52 to 76 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 2.5 V
  • Drain Source Voltage
    1200 V
  • Drain Source Resistance
    52 to 76 milli-ohm
  • Continous Drain Current
    30 A
  • Total Charge
    8.25 nC
  • Input Capacitance
    236 pF
  • Output Capacitance
    72 pF
  • Turn-on Delay Time
    7 ns
  • Turn-off Delay Time
    26 ns
  • Rise Time
    35 ns
  • Fall Time
    78 ns
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO263-5L
  • Applications
    Switching Power Applications, Server and Telecom Power Application, EV OBC and DC-DC Converters, UPS, Inverters, PV

Technical Documents
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