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GPIXV30DFN

GaN Power Transistor by GaNPower International (30 more products)
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The GPIXV30DFN from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 1.01 to 1.7 V, Drain Source Voltage 1200 V, Drain Source Resistance 65 to 147 milli-ohm, Continous Drain Current 30 A, Total Charge 11.2 nC. Tags: Surface Mount. More details for GPIXV30DFN can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPIXV30DFN
  • Manufacturer
    GaNPower International
  • Description
    1200 V, 65 to 147 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.01 to 1.7 V
  • Drain Source Voltage
    1200 V
  • Drain Source Resistance
    65 to 147 milli-ohm
  • Continous Drain Current
    30 A
  • Total Charge
    11.2 nC
  • Input Capacitance
    223 pF
  • Output Capacitance
    79 pF
  • Turn-on Delay Time
    19 ns
  • Turn-off Delay Time
    17 ns
  • Rise Time
    20 ns
  • Fall Time
    40 ns
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    Switching Power Applications, Server and Telecom Power Application, EV OBC and DC-DC Converters, UPS, Inverters, PV
  • Dimensions
    8 x 8 mm

Technical Documents
View details on the manufacturer's website
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